Strong enhancement of Raman-induced nonreciprocity in silicon waveguides by alignment with the crystallographic axes

Strong enhancement of Raman-induced nonreciprocity in&n

M. Krause, H. Renner, E. Brinkmeyer,
Strong enhancement of Raman-induced nonreciprocity in silicon waveguides by alignment with the crystallographic axes
Appl. Phys. Lett. 95(26), p. 261111 (2009)

Abstract: Raman gain in silicon photonic wires depends on the relative propagation directions of the pump and Stokes waves due to strong longitudinal mode-field components. Here we show that this Raman-induced nonreciprocity can be varied in a wide range by changing the orientation of the waveguide with respect to the crystallographic axes. In a <001> orientation, the nonreciprocity reaches its maximum which is larger by more than two orders of magnitude as compared to the traditional <011> orientation. The waveguide is then practically Raman-inactive for co-propagation, while the contra-directional Stokes wave may experience significant Raman gain.

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