Efficiency increase of silicon-on-insulator Raman lasers by reduction of free-carrier absorption in tapered waveguides

Efficiency increase of silicon-on-insulator Raman laser

M. Krause, H. Renner, E. Brinkmeyer,
Efficiency increase of silicon-on-insulator Raman lasers by reduction of free-carrier absorption in tapered waveguides
Conference on Lasers and Electro-Optics (CLEO), Baltimore, Maryland, May 22-27 (Paper CThB1), (2005)

Abstract: The efficiency of continuous-wave SOI Raman lasers can be increased significantly by using a waveguide with a longitudinally varying (as opposed to a constant) effective area, thus reducing the impact of free-carrier absorption.

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